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JANTX1N6152AUS Технические параметры

Semtech  JANTX1N6152AUS technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация TVS - Diodes
Марка Semtech
Mounting Type Stud Mount
Package / Case DO-203AA, DO-4, Stud
Surface Mount YES
Supplier Device Package DO-203AA (DO-4)
Diode Element Material SILICON
Number of Terminals 2Terminals
Package Bulk
Mfr Microchip Technology
Product Status Active
Package Description O-LELF-R2
Package Style LONG FORM
Package Body Material GLASS
Reflow Temperature-Max (s) 20
Rohs Code No
Manufacturer Part Number JANTX1N6152AUS
Package Shape ROUND
Manufacturer Microsemi Corporation
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer MICROSEMI CORP
Risk Rank 5.47
Part Package Code MELF
Series MILITARY, MIL-PRF-19500/478
Operating Temperature -
JESD-609 Code e0
Pbfree Code No
ECCN Code EAR99
Type Zener
Terminal Finish Tin/Lead (Sn/Pb)
Applications General Purpose
Свойство продукта Значение свойства
HTS Code 8541.10.00.50
Technology Standard
Terminal Position END
Terminal Form WRAP AROUND
Peak Reflow Temperature (Cel) 225
Reach Compliance Code compliant
Pin Count 2
Reference Standard MIL
JESD-30 Code O-LELF-R2
Qualification Status Qualified
Polarity UNIDIRECTIONAL
Configuration SINGLE
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
Current - Reverse Leakage @ Vr 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If 950 mV @ 20 A
Case Connection ISOLATED
Power Line Protection No
Voltage - Breakdown (Min) 25.7V
Power - Peak Pulse 1500W (1.5kW)
Current - Peak Pulse (10/1000μs) 40.1A
Voltage - Clamping (Max) @ Ipp 37.4V
Voltage - Reverse Standoff (Typ) 20.6V
Operating Temperature - Junction -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max) 50 V
Current - Average Rectified (Io) 20A
Bidirectional Channels 1
Rep Pk Reverse Voltage-Max 20.6 V
Capacitance @ Vr, F 300pF @ 10V, 1MHz
Capacitance @ Frequency -
Non-rep Peak Rev Power Dis-Max 1500 W
Reverse Recovery Time (trr) 35 ns
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