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JANTXV1N5806 Технические параметры
Semtech JANTXV1N5806 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | Semtech | |
| Mounting Type | Through Hole | |
| Package / Case | Axial | |
| Surface Mount | NO | |
| Supplier Device Package | Axial | |
| Diode Element Material | SILICON | |
| Number of Terminals | 2Terminals | |
| Package | Bulk | |
| Base Product Number | 1N5806 | |
| Mfr | Semtech Corporation | |
| Product Status | Discontinued at Digi-Key | |
| Package Description | E-LALF-W2 | |
| Package Style | LONG FORM | |
| Package Body Material | GLASS | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | JANTXV1N5806 | |
| Package Shape | ELLIPTICAL | |
| Manufacturer | Sensitron Semiconductors | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | SENSITRON SEMICONDUCTOR | |
| Forward Voltage-Max (VF) | 0.875 V | |
| Risk Rank | 1.63 | |
| Series | * | |
| JESD-609 Code | e0 | |
| Pbfree Code | No | |
| Part Status | Active | |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Applications | ULTRA FAST RECOVERY | |
| Additional Feature | HIGH RELIABILITY | |
| HTS Code | 8541.10.00.80 | |
| Subcategory | Rectifier Diodes | |
| Terminal Position | AXIAL | |
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 2 | |
| Reference Standard | MIL-19500 | |
| JESD-30 Code | E-LALF-W2 | |
| Qualification Status | Qualified | |
| Configuration | SINGLE | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 1 µA @ 150 V | |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 1 A | |
| Case Connection | ISOLATED | |
| Operating Temperature - Junction | -65°C ~ 175°C | |
| Output Current-Max | 2.5 A | |
| Voltage - DC Reverse (Vr) (Max) | 150 V | |
| Current - Average Rectified (Io) | 3.3A | |
| Number of Phases | 1Phase | |
| Reverse Recovery Time | 25 | |
| Rep Pk Reverse Voltage-Max | 150 V | |
| Capacitance @ Vr, F | 25pF @ 5V, 1MHz | |
| Non-rep Pk Forward Current-Max | 35 A | |
| Diode Configuration | Single | |
| Repetitive Peak Reverse Voltage | 150 | |
| Reverse Recovery Time-Max | 0.025 µs | |
| Reverse Recovery Time (trr) | 25 ns |
Индекс :
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