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JANTXV1N5809US Технические параметры

Semtech  JANTXV1N5809US technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка Semtech
Mounting Type Surface Mount
Package / Case SQ-MELF
Surface Mount YES
Supplier Device Package -
Diode Element Material SILICON
Number of Terminals 2Terminals
Package Bulk
Base Product Number 1N5809
Mfr Semtech Corporation
Product Status Discontinued at Digi-Key
Package Description HERMETIC SEALED, GLASS, MELF-2
Package Style LONG FORM
Package Body Material GLASS
Operating Temperature-Min -65 °C
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 175 °C
Rohs Code No
Manufacturer Part Number JANTXV1N5809US
Power Dissipation (Max) 5 W
Package Shape ROUND
Manufacturer Microsemi Corporation
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer MICROSEMI CORP
Risk Rank 1.84
Part Package Code MELF
Series *
JESD-609 Code e0
Pbfree Code No
Part Status Active
Свойство продукта Значение свойства
Terminal Finish Tin/Lead (Sn/Pb)
Applications ULTRA FAST RECOVERY
Additional Feature HIGH RELIABILITY, METALLURGICALLY BONDED
HTS Code 8541.10.00.80
Terminal Position END
Terminal Form WRAP AROUND
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Pin Count 2
Reference Standard MIL-19500
JESD-30 Code O-LELF-R2
Qualification Status Qualified
Configuration SINGLE
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If 875 mV @ 4 A
Case Connection ISOLATED
Operating Temperature - Junction -
Output Current-Max 3 A
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 6A
Number of Phases 1Phase
Reverse Recovery Time 30
Rep Pk Reverse Voltage-Max 100 V
Capacitance @ Vr, F 60pF @ 5V, 1MHz
Non-rep Pk Forward Current-Max 125 A
Diode Configuration Single
Repetitive Peak Reverse Voltage 100
Reverse Recovery Time-Max 0.03 µs
Reverse Recovery Time (trr) 30 ns
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