Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
GP2S27T3J00F Технические параметры
Sharp Microelectronics GP2S27T3J00F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Optical Sensors - Reflective - Analog Output | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 4-SMD | |
| Number of Pins | 4Pins | |
| Collector-Emitter Breakdown Voltage | 35V | |
| Number of Elements | 1 Element | |
| Operating Temperature | -25°C~85°C | |
| Packaging | Cut Tape (CT) | |
| Published | 1998 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 5 (48 Hours) | |
| Reach Compliance Code | unknown | |
| Body Breadth | 3 mm | |
| Output Type | Phototransistor | |
| Termination Type | SOLDER |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Power Dissipation | 100mW | |
| Output Power | 75mW | |
| Forward Current | 50mA | |
| Response Time | 20μs, 20μs | |
| Rise Time | 100μs | |
| Forward Voltage | 1.2V | |
| Fall Time (Typ) | 100 μs | |
| Collector Emitter Voltage (VCEO) | 35V | |
| Max Collector Current | 20mA | |
| Sensing Distance | 0.028 (0.7mm) | |
| Reverse Breakdown Voltage | 6V | |
| Sensing Method | Reflective | |
| Max Breakdown Voltage | 35V | |
| Sensors/Transducers Type | LINEAR POSITION SENSOR,PHOTOELECTRIC,DIFFUSE | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ