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GP2S27TJ000F Технические параметры
Sharp Microelectronics GP2S27TJ000F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Optical Sensors - Reflective - Analog Output | |
| Марка | ||
| Mount | Surface Mount, Through Hole | |
| Mounting Type | Surface Mount | |
| Package / Case | 4-SMD | |
| Number of Pins | 4Pins | |
| Collector-Emitter Breakdown Voltage | 35V | |
| Number of Elements | 1 Element | |
| Operating Temperature | -25°C~85°C | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| JESD-609 Code | e2 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Terminal Finish | Tin/Copper (Sn/Cu) | |
| Reach Compliance Code | unknown | |
| Body Breadth | 3 mm |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Output Type | Phototransistor | |
| Termination Type | SOLDER | |
| Power Dissipation | 100mW | |
| Forward Current | 50mA | |
| Response Time | 20μs, 20μs | |
| Rise Time | 100μs | |
| Forward Voltage | 1.2V | |
| Fall Time (Typ) | 100 μs | |
| Collector Emitter Voltage (VCEO) | 35V | |
| Max Collector Current | 20mA | |
| Sensing Distance | 0.028 (0.7mm) | |
| Reverse Breakdown Voltage | 6V | |
| Sensing Method | Reflective | |
| Max Breakdown Voltage | 35V | |
| Sensors/Transducers Type | LINEAR POSITION SENSOR,PHOTOELECTRIC,DIFFUSE | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
GP2S27TJ000F Документы
- DatasheetsGP2S27J0000F Series GP2S27TJ000F-Sharp-Microelectronics-datasheet-128948.pdf
- PCN Obsolescence/ EOLGP2(L,S) 04/Apr/2011
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