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GP2S60A Технические параметры
Sharp Microelectronics GP2S60A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Optical Sensors - Reflective - Analog Output | |
| Марка | ||
| Factory Lead Time | 16 Weeks | |
| Contact Plating | Gold | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 4-SMD, No Lead | |
| Number of Pins | 4Pins | |
| Collector-Emitter Breakdown Voltage | 35V | |
| Current-Collector (Ic) (Max) | 20mA | |
| Number of Elements | 1 Element | |
| Operating Temperature | -25°C~85°C | |
| Packaging | Cut Tape (CT) | |
| Published | 2006 | |
| Part Status | Discontinued | |
| Moisture Sensitivity Level (MSL) | 5 (48 Hours) | |
| Max Operating Temperature | 85°C | |
| Min Operating Temperature | -25°C | |
| Output Type | Phototransistor |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Channels | 1Channel | |
| Power Dissipation | 100mW | |
| Forward Current | 20mA | |
| Response Time | 20μs | |
| Rise Time | 20μs | |
| Forward Voltage | 1.2V | |
| Fall Time (Typ) | 20 μs | |
| Collector Emitter Voltage (VCEO) | 35V | |
| Max Collector Current | 20mA | |
| Sensing Distance | 0.028 (0.7mm) | |
| Voltage - Collector Emitter Breakdown (Max) | 35V | |
| Reverse Breakdown Voltage | 6V | |
| Sensing Method | Reflective | |
| Max Breakdown Voltage | 35V | |
| Current - DC Forward (If) (Max) | 50mA | |
| Reverse Voltage (DC) | 6V | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
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