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PC81710NSZ Технические параметры
Sharp Microelectronics PC81710NSZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Optoisolators - Transistor, Photovoltaic Output | |
| Марка | ||
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | 4-DIP (0.300, 7.62mm) | |
| Number of Pins | 4Pins | |
| Collector-Emitter Saturation Voltage | 200mV | |
| Current Transfer Ratio-Min | 100% @ 500μA | |
| Number of Elements | 1 Element | |
| Operating Temperature | -30°C~100°C | |
| Packaging | Tube | |
| Published | 2003 | |
| JESD-609 Code | e0 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Additional Feature | UL RECOGNIZED | |
| Reach Compliance Code | unknown |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Voltage - Isolation | 5000Vrms | |
| Output Voltage | 80V | |
| Output Type | Transistor | |
| Configuration | SINGLE | |
| Number of Channels | 1Channel | |
| Power Dissipation | 170mW | |
| Voltage - Forward (Vf) (Typ) | 1.2V | |
| Input Type | DC | |
| Forward Current | 10mA | |
| Output Current per Channel | 3mA | |
| Rise Time | 18μs | |
| Fall Time (Typ) | 18 μs | |
| Collector Emitter Voltage (VCEO) | 200mV | |
| Rise / Fall Time (Typ) | 4μs 3μs | |
| Reverse Breakdown Voltage | 6V | |
| Current Transfer Ratio (Max) | 600% @ 500μA | |
| RoHS Status | Non-RoHS Compliant | |
| Lead Free | Contains Lead |
PC81710NSZ Документы
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