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PC81712NSZ1B Технические параметры

Sharp Microelectronics  PC81712NSZ1B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Optoisolators - Transistor, Photovoltaic Output
Марка
RoHS Details
Mounting Styles Through Hole
Current Transfer Ratio-Min 100 %
If - Forward Current 10 mA
Maximum Collector Emitter Voltage 80 V
Maximum Collector Current 2 mA
Maximum Collector Emitter Saturation Voltage 0.2 V
Fall Time 18 us
Pd - Power Dissipation 170 mW
Minimum Operating Temperature - 30 C
Свойство продукта Значение свойства
Maximum Operating Temperature + 100 C
Factory Pack QuantityFactory Pack Quantity 5000
Vr - Reverse Voltage 6 V
Packaging Cut Tape
Output Type NPN Phototransistor
Number of Channels 1 ChannelChannel
Rise Time 18 us
Isolation Voltage 5000 Vrms
Current Transfer Ratio (Max) 600 %
Current Transfer Ratio 100 %
Vf - Forward Voltage 1.4 V
Просмотр сходства
PC81712NSZ1B brand manufacturers: Sharp Microelectronics, Anli stock, PC81712NSZ1B reference price.Sharp Microelectronics. PC81712NSZ1B parameters, PC81712NSZ1B Datasheet PDF and pin diagram description download.You can use the PC81712NSZ1B Optoisolators - Transistor, Photovoltaic Output, DSP Datesheet PDF, find PC81712NSZ1B pin diagram and circuit diagram and usage method of function,PC81712NSZ1B electronics tutorials.You can download from the Anli.