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PC852XJ0000F Технические параметры
Sharp Microelectronics PC852XJ0000F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Optoisolators - Transistor, Photovoltaic Output | |
| Марка | ||
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | 4-DIP (0.300, 7.62mm) | |
| Number of Pins | 4Pins | |
| Current Transfer Ratio-Min | 1000% @ 1mA | |
| Number of Elements | 1 Element | |
| Operating Temperature | -30°C~100°C | |
| Packaging | Tube | |
| Published | 2005 | |
| JESD-609 Code | e2 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Terminal Finish | Tin/Copper (Sn/Cu) | |
| Additional Feature | UL RECOGNIZED | |
| Max Power Dissipation | 200mW | |
| Reach Compliance Code | unknown |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Voltage - Isolation | 5000Vrms | |
| Output Voltage | 350V | |
| Output Type | Darlington | |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
| Power Dissipation | 200mW | |
| Input Type | DC | |
| Forward Current | 50mA | |
| Output Current per Channel | 40mA | |
| Rise Time | 300μs | |
| Fall Time (Typ) | 100 μs | |
| Collector Emitter Voltage (VCEO) | 350V | |
| Max Collector Current | 150mA | |
| Rise / Fall Time (Typ) | 100μs 20μs | |
| Reverse Breakdown Voltage | 6V | |
| Current Transfer Ratio | 4000% | |
| Dark Current-Max | 200nA | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
PC852XJ0000F Документы
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