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PT4800E0000F Технические параметры
Sharp Microelectronics PT4800E0000F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Optical Sensors - Phototransistors | |
| Марка | ||
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | Radial | |
| Number of Pins | 2Pins | |
| Shape | ROUND | |
| Collector-Emitter Breakdown Voltage | 35V | |
| Operating Temperature | -25°C~85°C TA | |
| Packaging | Tube | |
| Published | 2008 | |
| JESD-609 Code | e1 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Max Power Dissipation | 75mW | |
| Orientation | Side View | |
| Number of Functions | 1Function | |
| Lead Length | 17.5mm | |
| Polarity | NPN | |
| Configuration | SINGLE | |
| Number of Channels | 1Channel |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Power Dissipation | 75mW | |
| Output Current | 20mA | |
| Viewing Angle | 70° | |
| Optoelectronic Device Type | PHOTO TRANSISTOR | |
| Lens Style | Domed | |
| Size | 0.8mm | |
| Rise Time | 3μs | |
| Fall Time (Typ) | 3.5 μs | |
| Collector Emitter Voltage (VCEO) | 6V | |
| Max Collector Current | 20mA | |
| Wavelength - Peak | 800 nm | |
| Power Consumption | 75mW | |
| Dark Current | 100μA | |
| Infrared Range | YES | |
| Light Current-Nom | 0.4mA | |
| Height | 3.5mm | |
| Length | 3mm | |
| Width | 3mm | |
| REACH SVHC | Unknown | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
Индекс :
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