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PT550F Технические параметры
Sharp Microelectronics PT550F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Optical Sensors - Phototransistors | |
| Марка | ||
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-206AA, TO-18-3 Metal Can | |
| Number of Pins | 3Pins | |
| Shape | ROUND | |
| Collector-Emitter Breakdown Voltage | 35V | |
| Number of Elements | 1 Element | |
| Operating Temperature | -25°C~125°C TA | |
| Packaging | Tube | |
| Published | 1997 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Terminal Finish | Tin (Sn) | |
| Max Power Dissipation | 150mW | |
| Orientation | Top View |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Functions | 1Function | |
| Polarity | NPN | |
| Configuration | SINGLE | |
| Power Dissipation | 150mW | |
| Output Current | 100mA | |
| Viewing Angle | 100° | |
| Optoelectronic Device Type | PHOTO DARLINGTON | |
| Lens Style | Domed | |
| Rise Time | 350μs | |
| Fall Time (Typ) | 300 μs | |
| Collector Emitter Voltage (VCEO) | 6V | |
| Max Collector Current | 100mA | |
| Dark Current | 1μA | |
| Infrared Range | YES | |
| Light Current-Nom | 20mA | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
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