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BC859B Технические параметры
Siemens BC859B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | Siemens | |
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | SIEMENS A G | |
| Part Package Code | SOT-23 | |
| Package Description | SOT-23, 3 PIN | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Transition Frequency-Nom (fT) | 250 MHz | |
| JESD-609 Code | e0 | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Additional Feature | LOW NOISE | |
| HTS Code | 8541.21.00.75 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | PNP | |
| Power Dissipation-Max (Abs) | 0.3 W | |
| Collector Current-Max (IC) | 0.1 A | |
| DC Current Gain-Min (hFE) | 220 | |
| Collector-Emitter Voltage-Max | 30 V | |
| VCEsat-Max | 0.65 V | |
| Power Dissipation Ambient-Max | 0.33 W |
BC859B Документы
- Datasheets2eeeaa5ba7895a9ba807f437cebfc946.pdf
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