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BUZ111SLE3045A Технические параметры
Siemens BUZ111SLE3045A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Siemens | |
| Mounting Type | Surface Mount | |
| Package / Case | 1932-BBGA, FCBGA | |
| Surface Mount | YES | |
| Supplier Device Package | 1932-FBGA, FC (45x45) | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Number of I/Os | 840I/Os | |
| Package | Bulk | |
| Current - Continuous Drain (Id) @ 25℃ | 80A | |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| Mfr | Siemens | |
| Power Dissipation (Max) | 300W | |
| Product Status | Obsolete | |
| Package Description | PLASTIC, TO-263, 3 PIN | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | BUZ111SLE3045A | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Infineon Technologies AG | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 5.77 | |
| Part Package Code | D2PAK | |
| Drain Current-Max (ID) | 80 A | |
| Operating Temperature | 0°C ~ 85°C (TJ) | |
| Series | Stratix® V GX | |
| JESD-609 Code | e0 | |
| Part Status | Active |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Subcategory | FET General Purpose Power | |
| Technology | MOSFET (Metal Oxide) | |
| Voltage - Supply | 0.82 V ~ 0.88 V | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Base Part Number | 5SGXEA5 | |
| Pin Count | 4 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Vgs(th) (Max) @ Id | - | |
| Drain to Source Voltage (Vdss) | 50 V | |
| Vgs (Max) | - | |
| Polarity/Channel Type | N-CHANNEL | |
| Number of Logic Elements/Cells | 490000Logic Elements/Cells | |
| JEDEC-95 Code | TO-263AB | |
| Total RAM Bits | 53105664 | |
| Number of LABs/CLBs | 185000LABs/CLBs | |
| Drain Current-Max (Abs) (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.01 Ω | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| DS Breakdown Voltage-Min | 55 V | |
| Avalanche Energy Rating (Eas) | 700 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 300 W | |
| FET Feature | - |
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