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2N2222A Технические параметры

STMicroelectronics  2N2222A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка STMicroelectronics
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 40V
Collector-Emitter Saturation Voltage 1V
Number of Elements 1 Element
hFEMin 40
Operating Temperature 175°C TJ
Packaging Bulk
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Type Switch
Terminal Finish Matte Tin (Sn)
Additional Feature LOW LEAKAGE CURRENT
Voltage - Rated DC 75V
Max Power Dissipation 500mW
Terminal Position BOTTOM
Terminal Form WIRE
Свойство продукта Значение свойства
Current Rating 600mA
Frequency 300MHz
Base Part Number 2N22
Pin Count 3
Element Configuration Single
Power Dissipation 500mW
Gain Bandwidth Product 300MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 150mA
Transition Frequency 300MHz
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
VCEsat-Max 1 V
Turn Off Time-Max (toff) 285ns
Collector-Base Capacitance-Max 8pF
Height 5.3mm
Length 5.8mm
Width 5.8mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

2N2222A Документы

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