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2N2905A Технические параметры

STMicroelectronics  2N2905A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка STMicroelectronics
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3Pins
Weight 4.535924g
Transistor Element Material SILICON
Manufacturer Package Identifier TO39-P008B
Collector-Emitter Breakdown Voltage -60V
Collector-Emitter Saturation Voltage -1.6V
Current-Collector (Ic) (Max) 600mA
Number of Elements 1 Element
hFEMin 50
Operating Temperature 175°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -60V
Max Power Dissipation 600mW
Terminal Position BOTTOM
Terminal Form WIRE
Current Rating -600mA
Frequency 200MHz
Свойство продукта Значение свойства
Base Part Number 2N29
Pin Count 3
Reference Standard CECC
Element Configuration Single
Power Dissipation 600mW
Transistor Application SWITCHING
Gain Bandwidth Product 200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) -60V
Max Collector Current -600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 60V
Transition Frequency 200MHz
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -5V
Max Junction Temperature (Tj) 175°C
Turn On Time-Max (ton) 45ns
Collector-Base Capacitance-Max 8pF
Diameter 9.4mm
Height 6.6mm
Length 9.4mm
Width 9.4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

2N2905A Документы

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