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BD679 Технические параметры
STMicroelectronics BD679 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | STMicroelectronics | |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) | |
| Factory Lead Time | 8 Weeks | |
| Contact Plating | Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-225AA, TO-126-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 80V | |
| Number of Elements | 1 Element | |
| hFEMin | 750 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tube | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Voltage - Rated DC | 80V | |
| Max Power Dissipation | 40W | |
| Current Rating | 4A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | BD679 | |
| Pin Count | 3 | |
| Polarity | NPN | |
| Element Configuration | Single | |
| Power Dissipation | 40W | |
| Case Connection | ISOLATED | |
| Transistor Application | SWITCHING | |
| Transistor Type | NPN - Darlington | |
| Collector Emitter Voltage (VCEO) | 80V | |
| Max Collector Current | 4A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A 3V | |
| Current - Collector Cutoff (Max) | 500μA | |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 30mA, 1.5A | |
| Transition Frequency | 10MHz | |
| Collector Base Voltage (VCBO) | 80V | |
| Emitter Base Voltage (VEBO) | 5V | |
| Height | 11.05mm | |
| Length | 7.8mm | |
| Width | 2.9mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
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