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BU508AF Технические параметры

STMicroelectronics  BU508AF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOWATT218FX
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 700V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Свойство продукта Значение свойства
Max Power Dissipation 50W
Base Part Number BU508
Pin Count 3
Element Configuration Single
Power Dissipation 50W
Case Connection ISOLATED
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 700V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 100mA 5V
Current - Collector Cutoff (Max) 200μA
Vce Saturation (Max) @ Ib, Ic 1V @ 1.6A, 4.5A
Collector Base Voltage (VCBO) 9V
Emitter Base Voltage (VEBO) 9V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BU508AF Документы

BU508AF brand manufacturers: STMicroelectronics, Anli stock, BU508AF reference price.STMicroelectronics. BU508AF parameters, BU508AF Datasheet PDF and pin diagram description download.You can use the BU508AF Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BU508AF pin diagram and circuit diagram and usage method of function,BU508AF electronics tutorials.You can download from the Anli.