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BU508AFI Технические параметры

STMicroelectronics  BU508AFI technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка STMicroelectronics
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOWATT-218-3
Number of Pins 218Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 700V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 700V
Max Power Dissipation 50W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 8A
Frequency 7MHz
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BU508
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Element Configuration Single
Power Dissipation 50W
Case Connection ISOLATED
Transistor Application SWITCHING
Gain Bandwidth Product 7MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 700V
Max Collector Current 8A
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 1V @ 2A, 4.5A
Transition Frequency 7MHz
Emitter Base Voltage (VEBO) 10V
DC Current Gain-Min (hFE) 10
VCEsat-Max 1 V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BU508AFI Документы

BU508AFI brand manufacturers: STMicroelectronics, Anli stock, BU508AFI reference price.STMicroelectronics. BU508AFI parameters, BU508AFI Datasheet PDF and pin diagram description download.You can use the BU508AFI Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BU508AFI pin diagram and circuit diagram and usage method of function,BU508AFI electronics tutorials.You can download from the Anli.