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BUL49DFP Технические параметры

STMicroelectronics  BUL49DFP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка STMicroelectronics
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 450V
Number of Elements 1 Element
hFEMin 10
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Matte Tin (Sn) - annealed
Свойство продукта Значение свойства
Max Power Dissipation 80W
Base Part Number BUL49
Pin Count 3
Element Configuration Single
Case Connection ISOLATED
Power - Max 34W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 450V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 4 @ 7A 10V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.2V @ 800mA, 4A
Emitter Base Voltage (VEBO) 10V
Radiation Hardening No
RoHS Status ROHS3 Compliant

BUL49DFP Документы

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