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BYT30P-1000 Технические параметры
STMicroelectronics BYT30P-1000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | STMicroelectronics | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | SOD-93-2 | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Packaging | Tube | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -40°C | |
| Additional Feature | FREE WHEELING DIODE | |
| HTS Code | 8541.10.00.80 | |
| Voltage - Rated DC | 1kV | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Current Rating | 30A | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | BYT30 | |
| Pin Count | 2 | |
| JESD-30 Code | R-PSFM-T2 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 100μA @ 1000V | |
| Power Dissipation | 60W | |
| Output Current | 30A | |
| Voltage - Forward (Vf) (Max) @ If | 1.9V @ 30A | |
| Case Connection | CATHODE | |
| Operating Temperature - Junction | -40°C~150°C | |
| Max Surge Current | 200A | |
| Voltage - DC Reverse (Vr) (Max) | 1000V | |
| Forward Voltage | 1.9V | |
| Max Reverse Voltage (DC) | 1kV | |
| Average Rectified Current | 30A | |
| Number of Phases | 1Phase | |
| Reverse Recovery Time | 165 ns | |
| Peak Reverse Current | 100μA | |
| Reverse Voltage | 1kV | |
| Recovery Time | 165 ns | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
BYT30P-1000 Документы
- DatasheetsBYT 30P-1000
Индекс :
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