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PD20010-E Технические параметры
STMicroelectronics PD20010-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | STMicroelectronics | |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) | |
| Factory Lead Time | 25 Weeks | |
| Mount | Surface Mount | |
| Package / Case | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | |
| Number of Pins | 3Pins | |
| Number of Elements | 1 Element | |
| Packaging | Tube | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 165°C | |
| Min Operating Temperature | -65°C | |
| Additional Feature | ESD PROTECTION, HIGH RELIABILITY | |
| Max Power Dissipation | 59W | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Current Rating | 5A | |
| Frequency | 2GHz | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | PD20010 | |
| Pin Count | 10 | |
| JESD-30 Code | R-PDSO-G2 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 59W | |
| Case Connection | SOURCE | |
| Current - Test | 150mA | |
| Transistor Application | AMPLIFIER | |
| Drain to Source Voltage (Vdss) | 40V | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | LDMOS | |
| Continuous Drain Current (ID) | 5A | |
| Gate to Source Voltage (Vgs) | 15V | |
| Gain | 11dB | |
| Max Output Power | 15W | |
| Drain Current-Max (Abs) (ID) | 5A | |
| Drain to Source Breakdown Voltage | 40V | |
| Power - Output | 10W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Voltage - Test | 13.6V | |
| RoHS Status | ROHS3 Compliant |
Индекс :
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