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PD20010S-E Технические параметры

STMicroelectronics  PD20010S-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка STMicroelectronics
Mount Surface Mount
Package / Case PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Number of Pins 3Pins
Number of Elements 1 Element
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 165°C
Min Operating Temperature -65°C
Additional Feature ESD PROTECTION, HIGH RELIABILITY
Max Power Dissipation 59W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 5A
Frequency 2GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number PD20010
Свойство продукта Значение свойства
Pin Count 10
JESD-30 Code R-PDFP-F2
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 59W
Case Connection SOURCE
Current - Test 150mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 40V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 15V
Gain 11dB
Max Output Power 15W
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage 40V
Power - Output 10W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 13.6V
RoHS Status ROHS3 Compliant
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PD20010S-E Документы

PD20010S-E brand manufacturers: STMicroelectronics, Anli stock, PD20010S-E reference price.STMicroelectronics. PD20010S-E parameters, PD20010S-E Datasheet PDF and pin diagram description download.You can use the PD20010S-E Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find PD20010S-E pin diagram and circuit diagram and usage method of function,PD20010S-E electronics tutorials.You can download from the Anli.