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PD55025S-E Технические параметры

STMicroelectronics  PD55025S-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка STMicroelectronics
Factory Lead Time 25 Weeks
Mount Surface Mount
Package / Case PowerSO-10 Exposed Bottom Pad
Number of Pins 4Pins
Number of Elements 1 Element
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
Max Operating Temperature 165°C
Min Operating Temperature -65°C
Additional Feature HIGH RELIABILITY
Voltage - Rated DC 40V
Max Power Dissipation 79W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 250
Current Rating 7A
Frequency 500MHz
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
Base Part Number PD55025
Pin Count 10
JESD-30 Code R-PDSO-F2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 79W
Case Connection SOURCE
Current - Test 200mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 40V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 20V
Gain 14.5dB
Max Output Power 25W
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 12.5V
Power Gain 14dB
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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PD55025S-E Документы

PD55025S-E brand manufacturers: STMicroelectronics, Anli stock, PD55025S-E reference price.STMicroelectronics. PD55025S-E parameters, PD55025S-E Datasheet PDF and pin diagram description download.You can use the PD55025S-E Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find PD55025S-E pin diagram and circuit diagram and usage method of function,PD55025S-E electronics tutorials.You can download from the Anli.