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PD57006STR-E Технические параметры

STMicroelectronics  PD57006STR-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка STMicroelectronics
Factory Lead Time 25 Weeks
Mount Surface Mount
Package / Case PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Number of Pins 3Pins
Number of Elements 1 Element
Packaging Tape & Reel (TR)
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish NICKEL PALLADIUM GOLD
Max Operating Temperature 165°C
Min Operating Temperature -65°C
Max Power Dissipation 20W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 1A
Frequency 945MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Base Part Number PD57006
Pin Count 10
JESD-30 Code R-PDSO-F2
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 20W
Case Connection SOURCE
Current - Test 70mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 65V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 20V
Gain 15dB
Max Output Power 6W
Drain Current-Max (Abs) (ID) 1A
Drain to Source Breakdown Voltage 65V
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status ROHS3 Compliant
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PD57006STR-E Документы

PD57006STR-E brand manufacturers: STMicroelectronics, Anli stock, PD57006STR-E reference price.STMicroelectronics. PD57006STR-E parameters, PD57006STR-E Datasheet PDF and pin diagram description download.You can use the PD57006STR-E Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find PD57006STR-E pin diagram and circuit diagram and usage method of function,PD57006STR-E electronics tutorials.You can download from the Anli.