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PD85015TRM-E Технические параметры

STMicroelectronics  PD85015TRM-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка STMicroelectronics
ECCN (US) EAR99
HTS 8541.29.00.95
Channel Mode Enhancement
Number of Elements per Chip 1
Process Technology LDMOS
Maximum Drain Source Voltage (V) 40
Maximum Gate Source Voltage (V) 15
Maximum VSWR 20(Min)
Maximum Continuous Drain Current (A) 5
Typical Input Capacitance @ Vds (pF) [email protected]
Typical Reverse Transfer Capacitance @ Vds (pF) [email protected]
Typical Output Capacitance @ Vds (pF) [email protected]
Maximum Power Dissipation (mW) 59000
Output Power (W) 20(Typ)
Typical Power Gain (dB) 16(Min)
Maximum Frequency (MHz) 1000
Typical Drain Efficiency (%) 70
Minimum Operating Temperature (°C) -65
Свойство продукта Значение свойства
Maximum Operating Temperature (°C) 165
Standard Package Name PowerSO-10RF (Formed lead)
Supplier Package PowerSO-10RF (Formed lead)
Military No
Mounting Surface Mount
Package Height 3.5
Package Length 9.5
Package Width 9.4
PCB changed 3
Lead Shape Gull-wing
Package Tape & Reel (TR)
Mfr STMicroelectronics
Product Status Obsolete
Packaging Tape and Reel
Series *
Part Status Active
Pin Count 3
Configuration Single
Channel Type N
RoHS Status Yes with exemptions
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PD85015TRM-E Документы

PD85015TRM-E brand manufacturers: STMicroelectronics, Anli stock, PD85015TRM-E reference price.STMicroelectronics. PD85015TRM-E parameters, PD85015TRM-E Datasheet PDF and pin diagram description download.You can use the PD85015TRM-E Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find PD85015TRM-E pin diagram and circuit diagram and usage method of function,PD85015TRM-E electronics tutorials.You can download from the Anli.