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PD85035C Технические параметры
STMicroelectronics PD85035C technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | STMicroelectronics | |
| Mount | Screw | |
| Package / Case | M243 | |
| Number of Pins | 243Pins | |
| Number of Elements | 1 Element | |
| Packaging | Bulk | |
| JESD-609 Code | e4 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Gold (Au) | |
| Max Operating Temperature | 200°C | |
| Min Operating Temperature | -65°C | |
| Max Power Dissipation | 108W | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Current Rating | 8A | |
| Frequency | 945MHz | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | PD85035 | |
| Pin Count | 2 | |
| JESD-30 Code | R-CDFM-F3 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 108W | |
| Case Connection | SOURCE | |
| Current - Test | 350mA | |
| Transistor Application | AMPLIFIER | |
| Drain to Source Voltage (Vdss) | 40V | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | LDMOS | |
| Continuous Drain Current (ID) | 8A | |
| Gate to Source Voltage (Vgs) | 15V | |
| Gain | 17.5dB | |
| Drain Current-Max (Abs) (ID) | 8A | |
| Drain to Source Breakdown Voltage | 40V | |
| Power - Output | 15W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Voltage - Test | 13.6V | |
| RoHS Status | ROHS3 Compliant |
PD85035C Документы
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