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PD85035S-E Технические параметры

STMicroelectronics  PD85035S-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка STMicroelectronics
Factory Lead Time 25 Weeks
Mount Surface Mount
Package / Case PowerSO-10 Exposed Bottom Pad
Number of Pins 3Pins
Number of Elements 1 Element
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 95W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 250
Current Rating 8A
Frequency 870MHz
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
Base Part Number PD85035
Pin Count 10
JESD-30 Code R-PDSO-F2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 95W
Case Connection SOURCE
Current - Test 350mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 40V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 15V
Gain 17dB
Max Output Power 40W
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 40V
Power - Output 15W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 13.6V
Radiation Hardening No
RoHS Status ROHS3 Compliant
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PD85035S-E Документы

PD85035S-E brand manufacturers: STMicroelectronics, Anli stock, PD85035S-E reference price.STMicroelectronics. PD85035S-E parameters, PD85035S-E Datasheet PDF and pin diagram description download.You can use the PD85035S-E Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find PD85035S-E pin diagram and circuit diagram and usage method of function,PD85035S-E electronics tutorials.You can download from the Anli.