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SD56120M Технические параметры

STMicroelectronics  SD56120M technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка STMicroelectronics
Mount Screw
Package / Case M252
Number of Pins 5Pins
Number of Elements 2 Elements
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Voltage - Rated DC 65V
Max Power Dissipation 236W
Terminal Form FLAT
Current Rating 14A
Frequency 860MHz
Base Part Number SD56120
Pin Count 4
JESD-30 Code R-PDFM-F4
Свойство продукта Значение свойства
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 236W
Case Connection SOURCE
Current - Test 400mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 65V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 14A
Gate to Source Voltage (Vgs) 20V
Gain 16dB
Max Output Power 120W
Drain to Source Breakdown Voltage 65V
Input Capacitance 221pF
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 32V
Min Breakdown Voltage 65V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

SD56120M Документы

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