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STB120NF10T4 Технические параметры

STMicroelectronics  STB120NF10T4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Weight 13.607771g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 110A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 312W Tc
Turn Off Delay Time 132 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series STripFET™ II
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 10.5mOhm
Voltage - Rated DC 100V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Current Rating 120A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STB120N
Свойство продукта Значение свойства
Pin Count 4
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 312W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.5m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 233nC @ 10V
Rise Time 90ns
Vgs (Max) ±20V
Fall Time (Typ) 68 ns
Continuous Drain Current (ID) 110A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 480A
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 550 mJ
Nominal Vgs 4 V
Height 4.6mm
Length 10.4mm
Width 9.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STB120NF10T4 Документы

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