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STB12NM50N Технические параметры

STMicroelectronics  STB12NM50N technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка STMicroelectronics
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 11A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Turn Off Delay Time 60 ns
Power Dissipation (Max) 100W Tc
Series MDmesh™ II
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 380MOhm
Terminal Finish Matte Tin (Sn) - annealed
Voltage - Rated DC 500V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Current Rating 11A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STB12N
Pin Count 3
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 100W
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 940pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 15ns
Vgs (Max) ±25V
Fall Time (Typ) 14 ns
Continuous Drain Current (ID) 11A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 44A
Dual Supply Voltage 500V
Nominal Vgs 3 V
RoHS Status ROHS3 Compliant
Radiation Hardening No
REACH SVHC No SVHC
Lead Free Lead Free

STB12NM50N Документы

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