Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
STMicroelectronics STB12NM50T4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | STMicroelectronics | |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) | |
| Factory Lead Time | 26 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 12A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 160W Tc | |
| Operating Temperature | -65°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | MDmesh™ | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 350mOhm | |
| Additional Feature | AVALANCHE RATED | |
| Voltage - Rated DC | 550V | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 245 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating | 12A | |
| Base Part Number | STB12N | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 160W | |
| Turn On Delay Time | 20 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 350m Ω @ 6A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 50μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V | |
| Rise Time | 10ns | |
| Vgs (Max) | ±30V | |
| Continuous Drain Current (ID) | 12A | |
| Threshold Voltage | 4V | |
| Gate to Source Voltage (Vgs) | 30V | |
| Drain to Source Breakdown Voltage | 500V | |
| Pulsed Drain Current-Max (IDM) | 48A | |
| Avalanche Energy Rating (Eas) | 400 mJ | |
| Nominal Vgs | 4 V | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |