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STB15NM60N Технические параметры

STMicroelectronics  STB15NM60N technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка STMicroelectronics
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 14A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 125W Tc
Turn Off Delay Time 80 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series MDmesh™ II
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
Base Part Number STB15N
Pin Count 3
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 299m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Rise Time 14ns
Vgs (Max) ±25V
Fall Time (Typ) 30 ns
Continuous Drain Current (ID) 14A
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.299Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 56A
Radiation Hardening No
RoHS Status ROHS3 Compliant

STB15NM60N Документы

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