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STB80NF55L-08-1 Технические параметры

STMicroelectronics  STB80NF55L-08-1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка STMicroelectronics
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 80A Tc
Drive Voltage (Max Rds On, Min Rds On) 5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 300W Tc
Turn Off Delay Time 85 ns
Operating Temperature 175°C TJ
Packaging Tube
Series STripFET™ II
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Свойство продукта Значение свойства
Base Part Number STB80N
Pin Count 3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 100nC @ 4.5V
Rise Time 145ns
Vgs (Max) ±16V
Fall Time (Typ) 65 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 55V
Avalanche Energy Rating (Eas) 870 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
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STB80NF55L-08-1 Документы

STB80NF55L-08-1 brand manufacturers: STMicroelectronics, Anli stock, STB80NF55L-08-1 reference price.STMicroelectronics. STB80NF55L-08-1 parameters, STB80NF55L-08-1 Datasheet PDF and pin diagram description download.You can use the STB80NF55L-08-1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find STB80NF55L-08-1 pin diagram and circuit diagram and usage method of function,STB80NF55L-08-1 electronics tutorials.You can download from the Anli.