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STB8N65M5 Технические параметры

STMicroelectronics  STB8N65M5 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 7A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 70W Tc
Turn Off Delay Time 20 ns
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series MDmesh™ V
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Resistance 560mOhm
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature ULTRA-LOW RESISTANCE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STB8N
Свойство продукта Значение свойства
Pin Count 4
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
Turn On Delay Time 50 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 690pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 14ns
Vgs (Max) ±25V
Fall Time (Typ) 11 ns
Continuous Drain Current (ID) 7A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 28A
Height 4.6mm
Length 10.75mm
Width 10.4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STB8N65M5 Документы

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