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STD10PF06T4 Технические параметры

STMicroelectronics  STD10PF06T4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка STMicroelectronics
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Weight 4.535924g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 10A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 40W Tc
Turn Off Delay Time 17 ns
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Series STripFET™ II
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 200mOhm
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -60V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -10A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STD10
Pin Count 3
JESD-30 Code R-PSSO-G2
Свойство продукта Значение свойства
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 40W
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 40ns
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 10A
Threshold Voltage -4V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 40A
Dual Supply Voltage -60V
Max Junction Temperature (Tj) 175°C
Nominal Vgs -4 V
Height 2.63mm
Length 6.6mm
Width 6.2mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STD10PF06T4 Документы

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