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STD13NM60N Технические параметры

STMicroelectronics  STD13NM60N technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 11A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 90W Tc
Turn Off Delay Time 30 ns
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series MDmesh™ II
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Resistance 360mOhm
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STD13
Pin Count 3
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G2
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 90W
Turn On Delay Time 3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 360m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 8ns
Vgs (Max) ±25V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 5.5A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 44A
Avalanche Energy Rating (Eas) 200 mJ
Max Junction Temperature (Tj) 150°C
Height 2.63mm
Length 6.6mm
Width 6.2mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STD13NM60N Документы

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