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STMicroelectronics STD13NM60N technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Single | |
Марка | STMicroelectronics | |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) | |
Factory Lead Time | 16 Weeks | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Number of Pins | 3Pins | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 11A Tc | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Number of Elements | 1 Element | |
Power Dissipation (Max) | 90W Tc | |
Turn Off Delay Time | 30 ns | |
Operating Temperature | 150°C TJ | |
Packaging | Tape & Reel (TR) | |
Series | MDmesh™ II | |
JESD-609 Code | e3 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 2Terminations | |
ECCN Code | EAR99 | |
Resistance | 360mOhm | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Peak Reflow Temperature (Cel) | 260 | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Base Part Number | STD13 | |
Pin Count | 3 |
Свойство продукта | Значение свойства | |
---|---|---|
JESD-30 Code | R-PSSO-G2 | |
Number of Channels | 1Channel | |
Element Configuration | Single | |
Operating Mode | ENHANCEMENT MODE | |
Power Dissipation | 90W | |
Turn On Delay Time | 3 ns | |
FET Type | N-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 360m Ω @ 5.5A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250μA | |
Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 50V | |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V | |
Rise Time | 8ns | |
Vgs (Max) | ±25V | |
Fall Time (Typ) | 10 ns | |
Continuous Drain Current (ID) | 5.5A | |
Threshold Voltage | 3V | |
Gate to Source Voltage (Vgs) | 25V | |
Drain to Source Breakdown Voltage | 600V | |
Pulsed Drain Current-Max (IDM) | 44A | |
Avalanche Energy Rating (Eas) | 200 mJ | |
Max Junction Temperature (Tj) | 150°C | |
Height | 2.63mm | |
Length | 6.6mm | |
Width | 6.2mm | |
REACH SVHC | No SVHC | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |