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STD20NF06LT4 Технические параметры

STMicroelectronics  STD20NF06LT4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 24A Tc
Drive Voltage (Max Rds On, Min Rds On) 5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 60W Tc
Turn Off Delay Time 20 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series STripFET™ II
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Resistance 40mOhm
Voltage - Rated DC 60V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 24A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STD20N
Свойство продукта Значение свойства
Pin Count 3
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 60W
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 50ns
Vgs (Max) ±18V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 24A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 18V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 96A
Nominal Vgs 2.5 V
Height 2.4mm
Length 6.6mm
Width 6.2mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STD20NF06LT4 Документы

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