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STD3NK80ZT4 Технические параметры

STMicroelectronics  STD3NK80ZT4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 2.5A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 70W Tc
Turn Off Delay Time 36 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SuperMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Resistance 4.5Ohm
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature AVALANCHE RATED
Voltage - Rated DC 800V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 2.5A
Свойство продукта Значение свойства
Base Part Number STD3N
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5 Ω @ 1.25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 485pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Rise Time 27ns
Vgs (Max) ±30V
Fall Time (Typ) 40 ns
Continuous Drain Current (ID) 1.25A
Threshold Voltage 3.75V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V
Max Junction Temperature (Tj) 150°C
Height 2.52mm
Length 6.6mm
Width 6.2mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STD3NK80ZT4 Документы

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