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STD5NM60-1 Технические параметры

STMicroelectronics  STD5NM60-1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 26 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 5A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 96W Tc
Turn Off Delay Time 23 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 650V
Peak Reflow Temperature (Cel) 260
Current Rating 8A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STD5N
Pin Count 3
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 96W
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 10ns
Vgs (Max) ±30V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 5A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 1Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 20A
Avalanche Energy Rating (Eas) 200 mJ
Height 6.2mm
Length 6.6mm
Width 2.4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STD5NM60-1 Документы

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