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STF7N52K3 Технические параметры

STMicroelectronics  STF7N52K3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка STMicroelectronics
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 6A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 25W Tc
Turn Off Delay Time 36 ns
Operating Temperature 150°C TJ
Packaging Tube
Series SuperMESH3™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Terminal Position SINGLE
Base Part Number STF7N
Pin Count 3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 25W
Свойство продукта Значение свойства
Case Connection ISOLATED
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 850m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Rise Time 11ns
Vgs (Max) ±30V
Fall Time (Typ) 19 ns
Continuous Drain Current (ID) 6A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 6.2A
Drain-source On Resistance-Max 0.98Ohm
Drain to Source Breakdown Voltage 525V
Pulsed Drain Current-Max (IDM) 25A
Nominal Vgs 3.75 V
Height 16.4mm
Length 10.4mm
Width 4.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STF7N52K3 Документы

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