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STMicroelectronics STGB10M65DF2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | STMicroelectronics | |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) | |
| Factory Lead Time | 30 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 650V | |
| Collector-Emitter Saturation Voltage | 1.55V | |
| Test Conditions | 400V, 10A, 22 Ω, 15V | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Cut Tape (CT) | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 115W | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | STGB10 | |
| Element Configuration | Single | |
| Input Type | Standard | |
| Power - Max | 115W | |
| Collector Emitter Voltage (VCEO) | 2V | |
| Max Collector Current | 20A | |
| Reverse Recovery Time | 96 ns | |
| Max Breakdown Voltage | 650V | |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 10A | |
| IGBT Type | Trench Field Stop | |
| Gate Charge | 28nC | |
| Current - Collector Pulsed (Icm) | 40A | |
| Td (on/off) @ 25°C | 19ns/91ns | |
| Switching Energy | 120μJ (on), 270μJ (off) | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant |