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STGB10M65DF2 Технические параметры

STMicroelectronics  STGB10M65DF2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 30 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 650V
Collector-Emitter Saturation Voltage 1.55V
Test Conditions 400V, 10A, 22 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 115W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGB10
Element Configuration Single
Input Type Standard
Power - Max 115W
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 20A
Reverse Recovery Time 96 ns
Max Breakdown Voltage 650V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 10A
IGBT Type Trench Field Stop
Gate Charge 28nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 19ns/91ns
Switching Energy 120μJ (on), 270μJ (off)
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

STGB10M65DF2 Документы

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