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STGB10NB37LZ Технические параметры

STMicroelectronics  STGB10NB37LZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 440V
Collector-Emitter Saturation Voltage 1.2V
Number of Elements 1 Element
Test Conditions 328V, 10A, 1k Ω, 5V
Operating Temperature -65°C~175°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature VOLTAGE CLAMPING
Max Power Dissipation 125W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STGB10
Pin Count 3
JESD-30 Code R-PSSO-G2
Element Configuration Single
Power Dissipation 125W
Case Connection COLLECTOR
Input Type Standard
Transistor Application AUTOMOTIVE IGNITION
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 20A
Turn On Time 860 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 4.5V, 10A
Turn Off Time-Nom (toff) 17800 ns
Gate Charge 28nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 1.3μs/8μs
Switching Energy 2.4mJ (on), 5mJ (off)
Gate-Emitter Thr Voltage-Max 2.4V
Height 4.6mm
Length 10.4mm
Width 9.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

STGB10NB37LZ Документы

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