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STGB10NB40LZT4 Технические параметры
STMicroelectronics STGB10NB40LZT4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | STMicroelectronics | |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) | |
| Factory Lead Time | 8 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| Number of Pins | 3Pins | |
| Weight | 2.240009g | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 440V | |
| Collector-Emitter Saturation Voltage | 1.2V | |
| Number of Elements | 1 Element | |
| Test Conditions | 328V, 10A, 1k Ω, 5V | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | Automotive, AEC-Q101, PowerMESH™ | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Voltage - Rated DC | 18V | |
| Max Power Dissipation | 150W | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 245 | |
| Current Rating | 20A | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | STGB10 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Element Configuration | Single | |
| Power Dissipation | 150W | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Transistor Application | AUTOMOTIVE IGNITION | |
| Rise Time | 270ns | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 1.8V | |
| Max Collector Current | 20A | |
| Max Breakdown Voltage | 440V | |
| Turn On Time | 1570 ns | |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 4.5V, 10A | |
| Continuous Collector Current | 20A | |
| Turn Off Time-Nom (toff) | 12000 ns | |
| Gate Charge | 28nC | |
| Current - Collector Pulsed (Icm) | 40A | |
| Td (on/off) @ 25°C | 1.3μs/8μs | |
| Switching Energy | 2.4mJ (on), 5mJ (off) | |
| Gate-Emitter Thr Voltage-Max | 2.2V | |
| Height | 4.6mm | |
| Length | 10.4mm | |
| Width | 9.35mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
STGB10NB40LZT4 Документы
- DatasheetsSTGB10NB40LZT4
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