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STGB14NC60KT4 Технические параметры
STMicroelectronics STGB14NC60KT4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | STMicroelectronics | |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| Mounting Type | Surface Mount | |
| Mount | Surface Mount | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 600V | |
| Collector-Emitter Saturation Voltage | 2.5V | |
| Turn Off Delay Time | 116 ns | |
| Test Conditions | 390V, 7A, 10 Ω, 15V | |
| Number of Elements | 1 Element | |
| Series | PowerMESH™ | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C~150°C TJ | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| Termination | SMD/SMT | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Voltage - Rated DC | 600V | |
| Max Power Dissipation | 80W | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 245 | |
| Current Rating | 14A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Base Part Number | STGB14 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PDSO-G2 | |
| Element Configuration | Single | |
| Power Dissipation | 80W | |
| Input Type | Standard | |
| Turn On Delay Time | 22.5 ns | |
| Transistor Application | POWER CONTROL | |
| Rise Time | 8.5ns | |
| Drain to Source Voltage (Vdss) | 600V | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 600V | |
| Max Collector Current | 25A | |
| Continuous Drain Current (ID) | 25A | |
| Max Breakdown Voltage | 600V | |
| Turn On Time | 31.5 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 7A | |
| Turn Off Time-Nom (toff) | 340 ns | |
| Gate Charge | 34.4nC | |
| Td (on/off) @ 25°C | 22.5ns/116ns | |
| Switching Energy | 82μJ (on), 155μJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 6.5V | |
| RoHS Status | ROHS3 Compliant | |
| Radiation Hardening | No | |
| REACH SVHC | No SVHC | |
| Lead Free | Lead Free |
STGB14NC60KT4 Документы
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