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STGB19NC60KDT4 Технические параметры

STMicroelectronics  STGB19NC60KDT4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 480V, 12A, 10 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Power Dissipation 125W
Terminal Form GULL WING
Base Part Number STGB19
Свойство продукта Значение свойства
Pin Count 4
JESD-30 Code R-PSSO-G2
Element Configuration Single
Input Type Standard
Power - Max 125W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 35A
Reverse Recovery Time 31 ns
Max Breakdown Voltage 600V
Turn On Time 38 ns
Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 12A
Turn Off Time-Nom (toff) 270 ns
Gate Charge 55nC
Current - Collector Pulsed (Icm) 75A
Td (on/off) @ 25°C 30ns/105ns
Switching Energy 165μJ (on), 255μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Radiation Hardening No
RoHS Status ROHS3 Compliant

STGB19NC60KDT4 Документы

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