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STGB20NB41LZT4 Технические параметры

STMicroelectronics  STGB20NB41LZT4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 442V
Collector-Emitter Saturation Voltage 2V
Number of Elements 1 Element
Test Conditions 320V, 20A, 1k Ω, 5V
Turn Off Delay Time 12.1 μs
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Voltage - Rated DC 20V
Max Power Dissipation 200W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Current Rating 20A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STGB20
Pin Count 3
JESD-30 Code R-PSSO-G2
Element Configuration Single
Power Dissipation 200W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 1 μs
Transistor Application AUTOMOTIVE IGNITION
Rise Time 220ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 382V
Max Collector Current 40A
Max Breakdown Voltage 442V
Turn On Time 1220 ns
Vce(on) (Max) @ Vge, Ic 2V @ 4.5V, 20A
Turn Off Time-Nom (toff) 16100 ns
Gate Charge 46nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 1μs/12.1μs
Switching Energy 5mJ (on), 12.9mJ (off)
Gate-Emitter Thr Voltage-Max 2.4V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STGB20NB41LZT4 Документы

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