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STGB30H60DFB Технические параметры

STMicroelectronics  STGB30H60DFB technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 400V, 30A, 10 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Power Dissipation 260W
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Base Part Number STGB30
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 260W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 60A
Reverse Recovery Time 53 ns
Max Breakdown Voltage 600V
Turn On Time 51.1 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Turn Off Time-Nom (toff) 223 ns
IGBT Type Trench Field Stop
Gate Charge 149nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 37ns/146ns
Switching Energy 383μJ (on), 293μJ (off)
RoHS Status ROHS3 Compliant
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STGB30H60DFB Документы

STGB30H60DFB brand manufacturers: STMicroelectronics, Anli stock, STGB30H60DFB reference price.STMicroelectronics. STGB30H60DFB parameters, STGB30H60DFB Datasheet PDF and pin diagram description download.You can use the STGB30H60DFB Transistors - IGBTs - Single, DSP Datesheet PDF, find STGB30H60DFB pin diagram and circuit diagram and usage method of function,STGB30H60DFB electronics tutorials.You can download from the Anli.