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STGB7NC60HDT4 Технические параметры

STMicroelectronics  STGB7NC60HDT4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.5V
Number of Elements 1 Element
Test Conditions 390V, 7A, 10 Ω, 15V
Turn Off Delay Time 72 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Voltage - Rated DC 600V
Max Power Dissipation 80W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Current Rating 14A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STGB7
Pin Count 4
JESD-30 Code R-PSSO-G2
Element Configuration Single
Power Dissipation 25W
Input Type Standard
Turn On Delay Time 18.5 ns
Power - Max 80W
Transistor Application POWER CONTROL
Rise Time 8.5ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 25A
Reverse Recovery Time 37 ns
Max Breakdown Voltage 600V
Turn On Time 25.5 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 7A
Turn Off Time-Nom (toff) 221 ns
Gate Charge 35nC
Current - Collector Pulsed (Icm) 50A
Td (on/off) @ 25°C 18.5ns/72ns
Switching Energy 95μJ (on), 115μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STGB7NC60HDT4 Документы

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