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STGD18N40LZT4 Технические параметры

STMicroelectronics  STGD18N40LZT4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Weight 350.003213mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 420V
Collector-Emitter Saturation Voltage 1.35V
Number of Elements 1 Element
Test Conditions 300V, 10A, 5V
Turn Off Delay Time 13.5 s
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature VOLTAGE CLAMPING
Max Power Dissipation 125W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STGD18
Pin Count 3
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Input Type Logic
Turn On Delay Time 650 ms
Power - Max 125W
Transistor Application AUTOMOTIVE IGNITION
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 360V
Max Collector Current 25A
Max Breakdown Voltage 420V
Turn On Time 4450 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 4.5V, 10A
Turn Off Time-Nom (toff) 22200 ns
Gate Charge 29nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 650ns/13.5μs
Gate-Emitter Voltage-Max 16V
Height 2.4mm
Length 6.6mm
Width 6.2mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STGD18N40LZT4 Документы

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