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STGD3NB60SDT4 Технические параметры
STMicroelectronics STGD3NB60SDT4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | STMicroelectronics | |
| Factory Lead Time | 8 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 600V | |
| Collector-Emitter Saturation Voltage | 1.5V | |
| Number of Elements | 1 Element | |
| Test Conditions | 480V, 3A, 1k Ω, 15V | |
| Turn Off Delay Time | 1 μs | |
| Operating Temperature | 175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | PowerMESH™ | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Voltage - Rated DC | 600V | |
| Max Power Dissipation | 48W | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 3A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Base Part Number | STGD3 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Element Configuration | Single | |
| Power Dissipation | 48W | |
| Input Type | Standard | |
| Turn On Delay Time | 125 μs | |
| Transistor Application | POWER CONTROL | |
| Rise Time | 150μs | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 600V | |
| Max Collector Current | 6A | |
| Reverse Recovery Time | 1.7μs | |
| Max Breakdown Voltage | 600V | |
| Turn On Time | 275 ns | |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 3A | |
| Turn Off Time-Nom (toff) | 4800 ns | |
| Gate Charge | 18nC | |
| Current - Collector Pulsed (Icm) | 25A | |
| Td (on/off) @ 25°C | 125μs/- | |
| Switching Energy | 1.15mJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 4.5V | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
STGD3NB60SDT4 Документы
- DatasheetsSTGD3NB60SD
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